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AssigneeSilicon Laboratories Inc.
InventorsRuifeng Sun, Yunteng Huang
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In one form, a power detector includes first and third transistors of a first conductivity type, and second and fourth transistors of a second conductivity type. A control electrode of the first transistor receives a first bias voltage plus a positive component of a differential input signal. The second transistor is coupled in series with the first transistor and has a control electrode receiving a second bias voltage plus a negative component of the differential input signal. The third transistor is biased using the first bias voltage plus the negative component. The fourth transistor is coupled in series with the third transistor and is biased using the second bias voltage plus the positive component. A common interconnection point of the first and third transistors forms an output node. In another form, a power detector compares an output of a power detector core to multiple threshold voltages in corresponding comparators.
A power detector comprising:
A power detector comprising:
A power detector comprising:
Dependencies are inferred from the claim text.