Test structure for detection of defect devices with lowered resistance
AssigneeNXP B.V.
InventorsDirk Kenneth De Vries, Roberto Maurizio Gonella
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AssigneeNXP B.V.
InventorsDirk Kenneth De Vries, Roberto Maurizio Gonella
Estimating the term…
The present invention relates to a test structure that comprises at least two devices under test DUT, which respectively have a first electrical device resistance in a non-defect state and a second electrical device resistance in defect state, the first being higher than the second electrical device resistance. In the test structure the DUTs are connected in parallel to a first test contact pad via a first conducting line and connected in parallel to a second test contact pad via a second conducting line, and respectively connected to the first conducting line via respective first test resistors, which have known respective electrical test resistances, such that a total electrical resistance between the first an second test contact pads is indicative of the number of DUTs, which have the second electrical device resistance. The test structure allows testing a larger number of DUTs in parallel in a single measurement.
A test structure comprising:
A test method, comprising the steps of:
A testing method for testing at least two devices, wherein both devices include a first electrical device resistance in a non-defect state and a second electrical device resistance in a defect state, the first electrical device resistance being higher than the second electrical device resistance, the method comprising:
Dependencies are inferred from the claim text.