Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for RF power delivery
AssigneeApplied Materials, Inc.
InventorsSamer Banner, Valentin Todorow, Kartik Ramaswamy
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AssigneeApplied Materials, Inc.
InventorsSamer Banner, Valentin Todorow, Kartik Ramaswamy
Estimating the term…
Embodiments of the present invention generally provide methods and apparatus for pulsed plasma processing over a wide process window. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply and a common controller for tuning each of the RF power supply and the matching network.
An apparatus, comprising:
A method for tuning a system operating a plasma process using a source RF power supply and a bias RF power supply, each capable of frequency tuning and respectively coupled to a process chamber via a source matching network and a bias matching network, the method comprising:
A method for tuning a system operating a plasma process using a source RF power supply and a bias RF power supply, each capable of frequency tuning and respectively coupled to a process chamber via a source matching network and a bias matching network, the method comprising:
A method for tuning a system operating a plasma process in a time resolved manner using a source RF power supply and a bias RF power supply, each capable of frequency tuning and respectively coupled to a process chamber via a source matching network and a bias matching network, the method comprising:
Dependencies are inferred from the claim text.