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US 8,264,122 B2Granted
Acoustic wave device
AssigneeMurata Manufacturing Co., Ltd.
InventorMasakazu Mimura
Life of this patent
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Abstract
An acoustic wave device having an improved frequency-temperature characteristic and in which a spurious response of the higher order mode is suppressed includes a piezoelectric substrate made of LiNbO3, a SiO2 layer laminated on the piezoelectric substrate, and an IDT electrode disposed in an interface of the piezoelectric substrate and the SiO2 layer, wherein φ and θ of Euler angles expressed by (φ, θ, ψ) of LiNbO3 substrate satisfy φ=0° and 80°≦θ≦130°, respectively. The acoustic wave device using an acoustic wave primarily having an SH wave, wherein ψ is set to satisfy 5°≦ψ≦30°.
Claims5
An acoustic wave device comprising:
- a piezoelectric substrate made of LiNbO3;
- a dielectric layer laminated on the piezoelectric substrate;
- an IDT electrode disposed at an interface of the piezoelectric substrate and the dielectric layer, φ and θ of Euler angles expressed by (φ, θ, ψ) of LiNbO3 substrate satisfying φ=about 0° and 80°≦θ≦130° respectively, the acoustic wave device using an acoustic wave primarily having an SH wave;
- wherein
- ψ is set to satisfy 5°≦ψ≦30°;
- the dielectric layer is SiO2;
- the acoustic wave device is a surface acoustic wave device that utilizes an SH type surface acoustic wave as an acoustic wave;
- and
- θ of the Euler angles of LiNbO3 is in the range of 80°≦θ≦90°.
6 more elements
Dependencies are inferred from the claim text.