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US 8,264,086 B2Granted
Via structure with improved reliability
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShau-Lin Shue, Cheng-Lin Huang, Ching-Hua Hsieh
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Abstract
A via structure having improved reliability and performance and methods of forming the same are provided. The via structure includes a first-layer conductive line, a second-layer conductive line, and a via electrically coupled between the first-layer conductive line and the second-layer conductive line. The via has a substantially tapered profile and substantially extends into a recess in the first-layer conductive line.
Claims17
A semiconductor device comprising:
- a first conductor having a top surface and a via recess extending from the top surface into the first conductor to form a recess of a predetermined depth, wherein the first conductor is a metal line;
- a dielectric layer over the first conductor;
- a via structure comprising a via opening filled with a conductor and having a top end and a bottom end, wherein the via opening has a tapered profile with a width of the via opening gradually increasing substantially throughout the bottom end to the top end, and wherein the via structure includes the conductor that extends into the via recess;
- and
- an additional metal line adjoining the via structure, wherein the additional metal line has a substantially flat horizontal bottom surface, wherein a sidewall of the via opening increases in height monotonically and smoothly from a bottom of the via opening to a top of the via opening, with a rounded interface region connecting the sidewall at the top of the via opening to the substantially flat horizontal bottom surface of the additional metal line.
2 more elements
Dependencies are inferred from the claim text.