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US 8,264,085 B2Granted
Semiconductor device package interconnections
AssigneeInfineon Technologies AG
InventorGeorg Meyer-Berg
Life of this patent
Estimating the term…
Abstract
A semiconductor device. In one embodiment the device includes a carrier. A first material is deposited on the carrier. The first material has an elastic modulus of less than 100 MPa. A semiconductor chip is placed over the first material. A second material is deposited on the semiconductor chip, the second material being electrically insulating. A metal layer is placed over the second material.
Claims14
A device, comprising:
- a carrier;
- a first material deposited on the carrier, the first material having an elastic modulus of less than 100 MPa;
- a semiconductor chip placed over the first material;
- a second material deposited on the semiconductor chip, the second material being electrically insulating;
- a metal layer placed over the second material, the metal layer comprising an electrically conductive line having a first end and a second end, a length of the electrically conductive line from the first end to the second end extending along an outer surface of the second material, the second end forming an external contact pad, and a portion of the electrically conductive line forming a wave shaped structure with at least two peaks and a peak-to-peak distance in the range between 10 μm and 100 μm;
- and
- a via extending orthogonally to an active main surface of the semiconductor chip through the second material, which couples a contact element of the semiconductor chip to the first end of the electrically conductive line, the via containing a solder material,
- wherein the second material has an elastic modulus of less than 100 MPa.
5 more elements
A device, comprising:
- a carrier;
- a semiconductor chip attached to the carrier, the semiconductor chip comprising at least one contact element;
- an electrically insulating material covering the carrier and the semiconductor chip;
- a metal foil disposed at a distance from the semiconductor chip and covering the semiconductor chip, the metal foil arranged generally parallel to an active main surface of the semiconductor chip on which the at least one contact element is arranged and soldered to the at least one contact element, and a portion of the metal foil having a first cross-section in a direction parallel to a plane defined by the active main surface of the semiconductor chip, the first cross-section formed as a wave shaped structure with at least two peaks and a vertical peak-to-peak distance in the range between 10 μm and 100 μm;
- and
- a via made of solder and extending orthogonally to the active main surface of the semiconductor chip through the electrically insulating material, the via coupling the at least one contact element to the metal foil.
3 more elements
A device, comprising:
- a semiconductor chip comprising a contact element;
- an external contact element;
- an electrically conductive line electrically coupling the contact element to the external contact element, at least a portion of the electrically conductive line having a continuously curved form, the electrically conductive line having a first cross section in a direction parallel to a plane defined by an active main surface of the semiconductor chip having a continuously curved form;
- and
- a material having an elastic modulus of less than 100 MPa attached to the semiconductor chip, wherein the electrically conductive line is in direct contact with the material.
2 more elements
A device, comprising:
- a carrier;
- means for providing a first material deposited on the carrier, the first material means having an elastic modulus of less than 100 MPa;
- a semiconductor chip placed over the first material;
- means for providing a second material deposited on the semiconductor chip, the second material being electrically insulating and having an elastic modulus of less than 100 MPa;
- means for providing a metal layer placed over the second material, the metal layer comprising an electrically conductive line having a first end and a second end, a length of the electrically conductive line from the first end to the second end extending along an outer surface of the second material, the second end forming an external contact pad, and a portion of the electrically conductive line forming a wave shaped structure with at least two peaks and a peak-to-peak distance in the range between 10 μm and 100 μM;
- and
- means for providing a via extending orthogonally to an active main surface of the semiconductor chip through the second material which couples a contact element of the semiconductor chip to a first end of the electrically conductive line, wherein the via contains solder material.
4 more elements
Dependencies are inferred from the claim text.