Semiconductor device and method of dual-molding die formed on opposite sides of build-up interconnect structure

A semiconductor device, comprising:

• a first interconnect structure;
• a first semiconductor die having an active surface oriented towards and mounted over a first surface of the first interconnect structure;
• a first encapsulant deposited over the first interconnect structure and first semiconductor die;
• a second semiconductor die having an active surface oriented towards and mounted over a second surface of the first interconnect structure opposite the first surface;
• a plurality of first conductive pillars formed over the second surface of the first interconnect structure;
• a second encapsulant deposited over the second semiconductor die and around the plurality of first conductive pillars;
• and
• a second interconnect structure formed over the second encapsulant.

A semiconductor device, comprising:

• a first interconnect structure;
• a first semiconductor die mounted over a first surface of the first interconnect structure;
• a first encapsulant deposited over the first interconnect structure and first semiconductor die;
• a second semiconductor die mounted over a second surface of the first interconnect structure opposite the first surface;
• a plurality of first conductive pillars formed over the second surface of the first interconnect structure;
• and
• a second encapsulant deposited over the second semiconductor die and around the plurality of first conductive pillars.

A semiconductor device, comprising:

• a first interconnect structure;
• a first semiconductor die mounted over a first surface of the first interconnect structure;
• a second semiconductor die mounted over a second surface of the first interconnect structure opposite the first surface;
• a plurality of first conductive pillars formed over the second surface of the first interconnect structure;
• a first encapsulant deposited over the first interconnect structure and first semiconductor die;
• a second encapsulant deposited over the second semiconductor die and around the plurality of first conductive pillars;
• and
• a second interconnect structure formed over the second encapsulant and electrically connected to the plurality of first conductive pillars and the first and second semiconductor die.

A semiconductor device, comprising:

• a first interconnect structure;
• a first semiconductor die mounted over a first surface of the first interconnect structure;
• a second semiconductor die mounted over a second surface of the first interconnect structure opposite the first surface;
• a plurality of first conductive pillars formed over the second surface of the first interconnect structure;
• and
• a shielding layer formed over the first semiconductor die or second semiconductor die.