Power semiconductor module with overcurrent protective device

A power semiconductor module having at least one fuse, wherein the power semiconductor module comprises:

• a housing;
• outward-extending load terminal elements;
• and
• at least one electrically insulating substrate disposed inside said housing, said at least one electrically insulating substrate having
• an insulating body with at least a first main face oriented toward the power semiconductor module;
• and
• at least first and second connecting tracks of different polarity, electrically insulated from one another, located on said first main face, for receiving at least one power semiconductor component;
• and first connecting elements with a first line cross section to connect said power semiconductor component;
• wherein said fuse comprises a second connecting element having a second line cross section less than said first line cross section, located between said first connecting track and one of said second connecting track and a load terminal element;
• and
• wherein said second connecting element is at least partly sheathed by an explosion protection means, and said second connecting element and said explosion protecting means are enclosed in a frame, said explosion protecting means allowing for the controlled development of an arc, thereby avoiding a rapid increase in pressure due to an explosion.