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US 8,264,063 B2Granted
Capacitive element, method of manufacture of the same, and semiconductor device
AssigneeFujitsu Limited
InventorsTakeshi Shioga, John David Baniecki, Kazuaki Kurihara
Life of this patent
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Abstract
A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).
Claims11
A capacitive element comprising:
- a base formed of flexible resin;
- a lower barrier layer coupled on the base;
- a capacitor coupled on the lower barrier layer, the capacitor including a lower electrode, a capacitor dielectric layer and an upper electrode in this order on the lower barrier layer;
- and
- an upper barrier layer covering at least the capacitor dielectric layer and the lower barrier layer,
- wherein at least one of the lower barrier layer and the upper barrier layer is made of an amorphous metal oxide material, and
- the lower electrode has a double-layered structure that consists of an adhesion layer formed on the lower barrier layer, and a main conductive layer formed on the adhesion layer, made of a material different from that of the adhesion layer and being thicker than the adhesion layer.
4 more elements
A semiconductor device comprising:
- a semiconductor element;
- and
- a capacitive element including:
- a base formed of flexible resin;
- a lower barrier layer coupled on the base;
- a capacitor coupled on the lower barrier layer, the capacitor including (i) a lower electrode, (ii) a capacitor dielectric layer and (iii) an upper electrode in this order on the lower barrier layer;
- and an upper barrier layer covering at least the capacitor dielectric layer and the lower barrier layer, the capacitive element being mounted on one of the surfaces of the semiconductor element,
- wherein at least one of the lower barrier layer and the upper barrier layer is made of an amorphous metal oxide material, and
- the lower electrode has a double-layered structure that consists of an adhesion layer formed on the lower barrier layer, and a main conductive layer formed on the adhesion layer, made of a material different from that of the adhesion layer and being thicker than the adhesion layer.
6 more elements
Dependencies are inferred from the claim text.