Semiconductor device and method of manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorHiroki Fujii
Life of this patent
Estimating the term…
Abstract
A sinker layer is in contact with a first conductivity-type well, and is separated from a first conductivity-type collector layer and a second conductivity-type drift layer. A second conductivity-type diffusion layer (second second-conductivity-type high-concentration diffusion layer) is formed in the surface layer of the sinker layer. The second conductivity-type diffusion layer has a higher impurity concentration than that of the sinker layer. The second conductivity-type diffusion layer and the first conductivity-type collector layer are isolated from each other with an element isolation insulating film interposed therebetween.
Claims7
A semiconductor device comprising:
- a substrate having a first conductivity-type semiconductor layer in the surface layer;
- a first first-conductivity-type high-concentration diffusion layer, formed in the surface layer of the first conductivity-type semiconductor layer, which has a higher impurity concentration than that of the first conductivity-type semiconductor layer;
- a first second-conductivity-type high-concentration diffusion layer, formed in the surface layer of the first conductivity-type semiconductor layer, which is electrically connected to the first first-conductivity-type high-concentration diffusion layer and the first conductivity-type semiconductor layer;
- a second conductivity-type low-concentration drift layer, formed in the surface layer of the first conductivity-type semiconductor layer, which has a lower impurity concentration than that of the first second-conductivity-type high-concentration diffusion layer;
- a gate insulating film formed so as to cover the surface of the first conductivity-type semiconductor layer between the first second-conductivity-type high-concentration diffusion layer and the second conductivity-type low-concentration drift layer, and a portion of the second conductivity-type
- low-concentration drift layer;
- a gate electrode formed over the gate insulating film;
- a second first-conductivity-type high-concentration diffusion layer formed in the surface layer of the second conductivity-type low-concentration drift layer;
- a second conductivity-type sinker layer formed so as to surround the second conductivity-type low-concentration drift layer, the first second-conductivity-type high-concentration diffusion layer, and the first first-conductivity-type high-concentration diffusion layer, when seen in a plan view;
- a second conductivity-type buried layer, formed under the second conductivity-type sinker layer and the first conductivity-type semiconductor layer, respectively, which is in contact with the second conductivity-type sinker layer and the first conductivity-type semiconductor layer, respectively;
- wherein a side and a base of the first conductivity-type semiconductor layer is surrounded by the second conductivity-type sinker layer and the second conductivity-type buried layer, and
- the second conductivity-type sinker layer is electrically connected to the second first-conductivity-type high-concentration diffusion layer.
Dependencies are inferred from the claim text.