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US 8,264,030 B2Granted
Flash memory device and manufacturing method of the same
AssigneeDongbu HiTek Co., Ltd.
InventorYoung Jun Kwon
Life of this patent
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Abstract
A flash memory device and a method for manufacturing the same are provided. The flash memory device can include first and second memory gates on a substrate, an oxide layer on sides of and on the substrate outside of the first and second memory gates, a source poly contact between the first and second memory gates, first and second select gates outside the first and second memory gates, a drain region outside the first and second select gates, and a metal contact on the drain region and the source poly contact.
Claims9
A flash memory device comprising:
- a first memory gate and a second memory gate on a substrate;
- an oxide layer along sides of the first memory gate, along sides of the second memory gate, on the substrate outside of the first memory gate, and on the substrate outside of the second memory gate;
- a source region filled a with poly on the substrate between the first memory gate and the second memory gate;
- a self-aligned source poly contact between the first memory gate and the second memory gate;
- a first select gate outside of the first memory gate;
- a second select gate outside of the second select gate;
- drain regions outside the first select gate and the second select gate;
- and
- metal contacts on the drain regions and on the source poly contact.
6 more elements
Dependencies are inferred from the claim text.