US 8,264,023 B2 · Semiconductor device and manufacturing method of semiconductor device

Abstract

A semiconductor device includes a semiconductor substrate, a lower electrode, a magnetoresistive element, an upper electrode, and a protective film. The lower electrode is formed over the semiconductor substrate. The magnetoresistive element includes a fixed layer, a tunneling insulating film, and a free layer. The upper electrode is disposed over the free layer. The protective film covers the sides intersecting the main surfaces of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode. The fixed layer, whose magnetization direction is fixed, is disposed over the lower electrode. The tunneling insulating film is disposed over the fixed layer. The free layer, whose magnetization direction is variable, is disposed over a main surface of the tunneling insulating film. The width of the upper electrode is smaller than that of each of the lower electrode and the fixed layer.

Claims12

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate;
a lower electrode formed over a main surface of the semiconductor substrate;
a magnetoresistive element including a fixed layer whose magnetization direction is fixed disposed over a main surface of the lower electrode, a tunneling insulating film disposed over a main surface of the fixed layer, a free layer whose magnetization direction is variable disposed over a main surface of the tunneling insulating film;
an upper electrode disposed over a main surface of the free layer;
and
a protective film covering sides intersecting main surfaces of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode,
wherein a width of the upper electrode is smaller than that of each of the lower electrode and the fixed layer in a direction intersecting a lamination direction of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode.

4 more elements

A manufacturing method of a semiconductor device, comprising the steps of:

preparing a semiconductor substrate having a main surface;
forming a first conductive film over the main surface of the semiconductor substrate;
forming a first magnetic film over the first conductive film;
forming an insulating film over the first magnetic film;
forming a second magnetic film over the insulating film;
forming a second conductive film over the second magnetic film;
forming a lower electrode, a fixed layer, a tunneling insulating film, a free layer, and an upper electrode by respectively performing etching such that the first conductive film, the first magnetic film, the insulating film, the second magnetic film, and the second conductive film have respective desired shapes;
and
forming a protective film covering sides intersecting main surfaces of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode,
wherein the step of etching includes the steps of:
etching the first conductive film, the first magnetic film, the insulating film, the second magnetic film, and the second conductive film such that the second conductive film has a planar shape of the lower electrode;
and
after the etching step, etching at least a part of the second conductive film and the second magnetic film such that the second conductive film has a planar shape smaller than a planar shape of the lower electrode.

10 more elements

Dependencies are inferred from the claim text.

Semiconductor device and manufacturing method of semiconductor device

Life of this patent

Semiconductor device and manufacturing method of semiconductor device

Life of this patent

Abstract

Claims12