Static RAM cell design and multi-contact regime for connecting double channel transistors
AssigneeAdvanced Micro Devices, Inc.
InventorFrank Wirbeleit
Life of this patent
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Abstract
A static RAM cell may be formed on the basis of two double channel transistors and a select transistor, wherein a body contact may be positioned laterally between the two double channel transistors in the form of a dummy gate electrode structure, while a further rectangular contact may connect the gate electrodes, the source regions and the body contact, thereby establishing a conductive path to the body regions of the transistors. Hence, compared to conventional body contacts, a very space-efficient configuration may be established so that bit density in static RAM cells may be significantly increased.
Claims19
A memory cell, comprising:
- a P-type double channel transistor comprising a first gate electrode formed above an active region;
- an N-type double channel transistor comprising a second gate electrode formed above said active region;
- a dummy gate electrode formed above said active region and laterally positioned between said first gate electrode and said second gate electrode;
- an interlayer dielectric material formed above said P-type and N-type double channel transistors;
- and
- a contact element formed in said interlayer dielectric material, said contact element connecting to at least said first and second gate electrodes and said dummy gate electrode.
A semiconductor device, comprising:
- a first double channel transistor comprising a first gate electrode and a first body region;
- a second double channel transistor comprising a second gate electrode and a second body region;
- a body contact positioned laterally between said first and second double channel transistors, said body contact connecting to said first and second body regions;
- and
- a single contact element formed in an interlayer dielectric material, said contact element connecting to said body contact, said first and second gate electrodes and source regions of said first and second double channel transistors.
Dependencies are inferred from the claim text.