Semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor

A semiconductor device, comprising:

• a first insulated gate field effect transistor connected in series with a second field effect transistor
• wherein the second field effect transistor has a heavily doped source contact region electrically connected to a heavily doped drain contact region of the first insulated gate field effect transistor,
• wherein the breakthrough voltage of the first insulated gate field effect transistor is higher than the pinch voltage of the second field effect transistor, and
• wherein the second field effect transistor is a combination of one or more junction field transistors and one or more insulated gate field transistors, all with a common source contact diffusion.

A semiconductor device, comprising:

• a first insulated gate field effect transistor connected in series with a second field effect transistor
• wherein the second field effect transistor has a heavily doped source contact region electrically connected to a heavily doped drain contact region of the first insulated gate field effect transistor,
• wherein the breakthrough voltage of the first insulated gate field effect transistor is higher than the pinch voltage of the second field effect transistor,
• wherein the second field effect transistor is a junction field effect transistor, JFET and,
• wherein the second field effect transistor comprises a number of Ntop and Ptop layers arranged one of i) vertically vertically to make up channels and gates of paralleled junction field effect transistors with a common source region, and ii) horizontally to make up channels and gates of paralleled junction field effect transistors with a common source region.