Solid-state image capturing device and electronic information device
AssigneeSharp Kabushiki Kaisha
InventorTomohiko Kawamura
Life of this patent
Estimating the term…
Abstract
A device separation insulating film and a device separation semiconductor layer are provided for a device separation section for separating adjacent devices from each other, end portions of the device separation insulating film and end portions of the device separation semiconductor layer are provided to overlap each other in order to surround two sides of an outer-periphery of the voltage conversion section and also to surround a channel section of the charge transfer device and the light receiving devices and an end portion of the device separation insulating film facing an end face of the light receiving device is arranged inwardly below a control electrode with respect to an end face of the control electrode on the light receiving device side.
Claims75
A solid-state image capturing device in which a plurality of light receiving devices for each converting incident light to signal charge is arranged in two dimensions, the signal charge obtained by a conversion at a light receiving device is transferred to a voltage conversion section by a charge transfer device, and a signal amplified in accordance with a signal voltage obtained by a conversion at the voltage conversion section is read, wherein
- a device separation insulating film and a device separation semiconductor layer are provided for a device separation section for separating adjacent devices from each other,
- end portions of the device separation insulating film and end portions of the device separation semiconductor layer are provided to overlap each other in order to surround two sides of an outer-periphery of the voltage conversion section and also to surround a channel section of the charge transfer device and the light receiving device, wherein a gate insulation film is formed below a control electrode of the charge transfer device and above each of:
- the light receiving device, end portions of the device separation insulating film and end portions of the device separation semiconductor layer,
- an end portion of the device separation insulating film facing an end face of the light receiving device is arranged inwardly below the control electrode with respect to an end face of the control electrode on the light receiving device side or an end portion of the device separation insulating film facing an end face of the light receiving device is arranged as a protruded portion that extends beyond a portion below the end face of the control electrode on the light receiving device side and protrudes along a side of a periphery of the light receiving device, and
- an end face of the device separation insulating film extends perpendicularly from the side of the periphery light receiving device and extends perpendicularly from a side of a periphery of an adjacent light receiving device, wherein the end face of the device separating insulating film interfaces with a face of the device separation semiconductor layer.
A solid-state image capturing device in which a plurality of light receiving devices for each converting incident light to signal charge is arranged in two dimensions, the signal charge obtained by a conversion at a light receiving device is transferred to a voltage conversion section by a charge transfer device, and a signal amplified in accordance with a signal voltage obtained by a conversion at the voltage conversion section is read, wherein
- a device separation insulating film and a device separation semiconductor layer are provided for a device separation section for separating adjacent devices from each other,
- end portions of the device separation insulating film and end portions of the device separation semiconductor layer are provided to overlap each other in order to surround two sides of an outer-periphery of the voltage conversion section and also to surround a channel section of the charge transfer device and the light receiving device, wherein a gate insulation film is formed below a control electrode of the charge transfer device and above each of:
- the light receiving device, end portions of the device separation insulating film and end portions of the device separation semiconductor layer,
- an entire or partial device separation insulating film in its width direction, which extends along the two sides of the outer-periphery of the voltage conversion section, is provided under both ends of the control electrode of the charge transfer device or an entire or partial device separation insulating film in its width direction is provided as a protruded portion that extends along the two sides of the outer-periphery of the voltage conversion section, extends beyond portions below the ends at the control electrode and protrudes along the periphery of the light receiving device, and
- an end face of the device separation insulating film extends perpendicularly from the side of the periphery light receiving device and extends perpendicularly from a side of a periphery of an adjacent light receiving device, wherein the end face of the device separation insulating film interfaces with a face of the device separation semiconductor layer.
Dependencies are inferred from the claim text.