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US 8,264,012 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeFujitsu Semiconductor Limited
InventorAkito Hara
Life of this patent
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Abstract
A semiconductor device includes a field effect transistor and a strain generating layer to apply a stress to a channel region of the field effect transistor. The strain generating layer contains at least one of oxygen and nitrogen of 1.0×1018 cm−3 to 5.0×1019 cm−3, or alternatively, the strain generating layer contains self-interstitial atoms and/or vacancies of 1.0×1018 cm−3 to 5.0×1019 cm−3. In the latter case, at least a portion of the self-interstitial atoms and/or the vacancies exist as a cluster.
Claims1
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate electrode formed over the semiconductor substrate;
- a source extension region and a drain extension region having a first depth formed in the semiconductor substrate;
- a source region and a drain region having a second depth greater than the first depth formed in the semiconductor substrate;
- a first semiconductor layer including SiGe formed in the source region and a second semiconductor layer including SiGe formed in the drain region;
- a first impurity region including at least one of oxygen and carbon located between the first semiconductor layer and the source extension region, and a second impurity region including at least one of oxygen and carbon located between the second semiconductor layer and the drain extension region;
- wherein concentration of the oxygen or the carbon is 1.0×1018 cm−3 to 5.0×1019 cm−3;
- wherein the impurity region includes self-interstitial atoms and/or vacancies;
- and
- wherein the impurity region is a conductive region.
7 more elements
Dependencies are inferred from the claim text.