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US 8,264,005 B2Granted
Compound semiconductor device including AIN layer of controlled skewness
AssigneeFujitsu Limited
InventorsKenji Imanishi, Toshihide Kikkawa, Takeshi Tanaka, Yoshihiko Moriya, Yohei Otoki
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Abstract
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
Claims7
A compound semiconductor device comprising:
- a single crystal substrate;
- an AlN layer formed on said single crystal substrate;
- a buffer layer of nitride semiconductor formed on said AlN layer;
- a channel layer of nitride semiconductor formed on said buffer layer;
- a carrier supply layer of compound semiconductor formed over said channel layer;
- and
- a source electrode, a drain electrode and a gate electrode formed over said carrier supply layer,
- wherein an interface between said AlN layer and said buffer layer has a larger roughness than an interface between said single crystal substrate and said AlN layer,
- wherein a skewness of an upper surface of said AlN layer is positive.
6 more elements
A manufacture method for a compound semiconductor device comprising:
- epitaxially growing an AlN layer on a single crystal substrate;
- epitaxially growing a buffer layer of nitride semiconductor on said AlN layer;
- epitaxially growing a channel layer of nitride semiconductor on said buffer layer;
- epitaxially growing a carrier supply layer of nitride semiconductor on said channel layer;
- and
- forming a source electrode, a drain electrode and a gate electrode above said carrier supply layer,
- wherein growth conditions for said AlN layer are set in such a manner that an interface between said AlN layer and said buffer layer has a larger roughness than an interface between said single crystal substrate and said AlN layer,
- wherein the growth conditions for said AlN layer include a growth temperature of 1100° C. to 1200° C. and a V/III ratio larger than 500.
5 more elements
Dependencies are inferred from the claim text.