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US 8,264,004 B2Granted
Mechanism for forming a remote delta doping layer of a quantum well structure
AssigneeIntel Corporation
InventorsBeen-Yih Jin, Jack T. Kavalieros, Suman Datta, Amlan Majumdar, Robert S. Chau
Life of this patent
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Abstract
A method of fabricating a quantum well device includes forming a diffusion barrier on sides of a delta layer of a quantum well to confine dopants to the quantum well.
Claims15
A device comprising:
- a quantum well structure having:
- a quantum well layer;
- a delta doped layer operable to serve as a carrier reservoir;
- a first dopant diffusion barrier below the delta doped layer;
- and
- a second dopant diffusion barrier above the delta doped layer;
- a substrate;
- a graded transitional layer over the substrate;
- and
- a relaxed film epitaxial layer over the graded transitional layer and under the quantum well structure.
7 more elements
A device comprising:
- a quantum well structure including:
- a first wider bandgap layer;
- a second wider bandgap layer;
- a narrower bandgap layer sandwiched between the first and second wider bandgap layers,
- wherein at least one of the first and second wider bandgap layers is doped and operable to serve as a carrier reservoir, and
- wherein electronic band structures between the narrower bandgap layer and the first and second wider bandgap lavers are operable to confine carriers;
- a dopant diffusion barrier layer disposed between the first and second wider bandgap layers;
- a substrate;
- a graded transitional layer over the substrate;
- and
- a thick buffer layer operable to reduce dislocation defect of the narrower bandgap layer over the graded transitional layer, the thick buffer layer under the quantum well structure.
8 more elements
The device of 6, wherein the dopant diffusion barrier layer has a thickness of about 50 A.
A device comprising:
- a substrate;
- a quantum well structure over the substrate, the quantum well structure including:
- a first wider bandgap layer;
- a narrower bandgap layer over the first wider bandgap layer;
- and
- a second wider bandgap layer over the narrower bandgap layer, wherein electronic band
- structures between the narrower bandgap layer and the first and second wider bandgap layers are operable to confine carriers, and wherein at least one of the first and second wider bandgap layers is doped and operable to serve as a carrier reservoir;
- and
- a dopant diffusion barrier layer between the narrower bandgap layer and said one of the first and second wider bandgap layers;
- a high-k dielectric layer over the second wider bandgap layer;
- a metal gate over the high-k dielectric layer;
- and
- a source and a drain, wherein the quantum well structure is between the source and the drain;
- a graded transitional layer over the substrate;
- and
- a thick buffer layer operable to reduce dislocation defect of the narrower bandgap layer over the graded transitional layer, the thick buffer layer under the quantum well structure.
13 more elements
Dependencies are inferred from the claim text.