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US 8,263,999 B2Granted
Nitride semiconductor light-emitting device
AssigneeMitsubishi Electric Corporation
InventorsAkihito Ohno, Kyosuke Kuramoto
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Abstract
A nitride semiconductor light-emitting device includes a p-type contact layer, a p-type intermediate layer below the p-type contact layer, and a p-type cladding layer below the p-type intermediate layer. Band gap energy differences between the p-type contact layer and the p-type intermediate layer and also between the p-type intermediate layer and the p-type cladding layer are, respectively, 200 meV or below.
Claims6
A nitride semiconductor light emitting device, comprising:
- a p-type contact layer;
- a p-type intermediate layer;
- and
- a p-type cladding layer, said p-type intermediate layer being located between said p-type contact layer and said p-type cladding layer, wherein band gap energy differences between said p-type contact layer and said p-type intermediate layer and between said p-type intermediate layer and said p-type cladding layer, respectively, do not exceed 100 meV.
1 more element
Dependencies are inferred from the claim text.