Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof

A light-emitting gallium nitride-based III-V group compound semiconductor device, comprising:

• a substrate;
• an n-type semiconductor layer disposed over the substrate, said n-type semiconductor layer having an exposed and non-exposed areas;
• an active layer arranged over said non-exposed area of the n-type semiconductor layer, said active layer generating light;
• a p-type semiconductor layer arranged over the active layer;
• a resistant and reflective layer including a reflective layer made from a material selected from a group consisting of a metal and a dielectric, and being disposed over the p-type semiconductor layer, said resistant and reflective layer redirecting electrical current directed thereto toward areas surrounding said resistant and reflective layer, wherein the reflective layer is made from combinations of at least two materials with different refractive indices and the reflective layer is the bottom of the resistant and reflective layer and is disposed on the p-type semiconductor layer;
• a conductive layer arranged over the p-type semiconductor layer and the resistant and reflective layer, said conductive layer being in contiguous contact with said p-type semiconductor layer around said resistant and reflective layer;
• a first electrode disposed on the conductive layer and corresponding to the resistant and reflective layer, the first electrode having side surfaces in vertically aligned relationship with corresponding side surfaces of the resistant and reflective layer;
• a second electrode arranged on said exposed area of the n-type semiconductor layer, said second electrode being laterally displaced from said first electrode;
• wherein, upon applying a voltage to the first electrode and the second electrode, a current is generated and passes to said active layer around the resistant and reflective layer, thereby causing the active layer to generate the light, wherein the light passes through the resistant and reflective layer and emits from said light-emitting device effectively.