Compound semiconductor light-emitting element and illumination device using the same, and method for manufacturing compound semiconductor light-emitting element

A method for manufacturing a compound semiconductor light-emitting element, comprising:

• forming a first electrode on a first face of a substrate;
• forming a recess in the substrate, on a first side of a second face, in a first region being a partial region of the substrate, to form a level difference between the first region and a second region being at least part of a remaining region of the substrate excluding the first region;
• forming a foundation layer, for controlling a growth of nanoscale columnar crystalline structures, on a bottom of the recess;
• growing, on the bottom of the recess and in the second region on the second face, a plurality of the nanoscale columnar crystalline structures by stacking, in a predetermined order, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, up to substantially a same height over the bottom of the recess and over the second face in the second region;
• and
• forming a second electrode connected to top portions of the plurality of the nanoscale columnar crystalline structures.