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US 8,263,989 B2Granted
Semiconductor light emitting device
AssigneeLG Innotek Co., Ltd.
InventorHung Seob Cheong
Life of this patent
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Abstract
A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a plurality of concave portions, a reflector in at least one of the concave portions of the first nitride semiconductor layer, and a second nitride semiconductor layer on the first nitride semiconductor layer.
Claims17
A semiconductor light emitting device, comprising:
- a first semiconductor layer comprising a plurality of concave portions, the plurality of concave portions disposed on an upper portion of the first semiconductor layer;
- a reflector having a concaved upper surface, the reflector on at least one of the plurality of concave portions of the first semiconductor layer;
- a plurality of island patterns disposed in an lower portion of the first semiconductor layer;
- a second semiconductor layer on the first semiconductor layer;
- an active layer on the second semiconductor layer;
- and
- a third semiconductor layer on the active layer,
- wherein a material of the reflector differs from materials of the first semiconductor layer and the second semiconductor layer,
- wherein the reflector is disposed between the first semiconductor layer and the second semiconductor layer,
- wherein the plurality of island patterns are vertically aligned with the plurality of concave portions of the first semiconductor layer, and
- wherein a lower surface of the second semiconductor layer includes protrusions on the concaved top surface of the reflector, the protrusions protruding toward the first semiconductor layer.
8 more elements
A semiconductor light emitting device, comprising:
- a first semiconductor layer comprising a plurality of concave portions which are disposed on an upper portion of the first semiconductor layer;
- a first electrode under the first semiconductor layer;
- a reflector on at least one of the plurality of concave portions of the first semiconductor layer;
- a second semiconductor layer on the first semiconductor layer, the second semiconductor layer including a first type dopant;
- an active layer on the second semiconductor layer;
- and
- a third semiconductor layer on the active layer, the third semiconductor layer including a second type dopant;
- and
- an electrode layer on the third semiconductor layer,
- wherein a material of the reflector differs from materials of the first semiconductor layer and the second semiconductor layer,
- wherein the reflector is disposed between the first semiconductor layer and the second semiconductor layer,
- wherein the reflector is formed of a metal material, and
- wherein a lower surface of the second semiconductor layer is physically contacted with an upper surface of the first semiconductor layer and a portion of the reflector.
10 more elements
Dependencies are inferred from the claim text.