Back to results
US 8,263,985 B2Granted
Semiconductor light emitting device having one or more recesses on a layer
AssigneeLG Innotek Co., Ltd.
InventorSung Min Choi
Life of this patent
Estimating the term…
Abstract
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer comprising a plurality of recesses on the active layer.
Claims12
A semiconductor light emitting device, comprising:
- a substrate;
- a first conductive semiconductor layer on the substrate;
- an active layer on the first conductive semiconductor layer;
- a second conductive semiconductor layer on the active layer and having a first surface adjacent to the active layer and a second surface opposite to the first surface,
- wherein the second conductive semiconductor layer includes a plurality of recesses disposed on the second surface of the second conductive semiconductor layer;
- an electrode layer on the second conductive semiconductor layer,
- wherein the electrode layer comprises a hole corresponding to the one of the plurality of recesses, the hole being circumscribed by the electrode layer, and
- wherein the plurality of recesses extend toward the first surface without exceeding the first surface of the second conductive semiconductor layer,
- wherein the second conductive semiconductor layer includes a threading dislocation therein, and
- wherein one of the plurality of recesses corresponds to a position of the threading dislocation of the second conductive semiconductor layer.
7 more elements
A semiconductor light emitting device, comprising:
- a substrate comprising a convex pattern;
- a light emitting structure comprising a plurality of compound semiconductor layers on the substrate, the light emitting structure including
- a first conductive semiconductor layer on the substrate;
- an active layer on the first conductive semiconductor layer;
- a second conductive semiconductor layer on the active layer;
- and
- a third conductive semiconductor layer on the second conductive semiconductor layer;
- an electrode layer on the light emitting structure and having a lower surface adjacent to the light emitting structure and an upper surface opposite to the lower surface;
- and
- a recess disposed on an upper surface of the electrode layer at a predetermined position corresponding to the convex pattern of the substrate,
- wherein the recess extends from the upper surface of the electrode layer to the light emitting structure toward an upper surface of the active layer without existing within the active layer,
- wherein the recess is circumscribed by the electrode layer and is corresponded to the upper surface of the active layer,
- wherein the second conductive semiconductor layer is interposed between the active layer and the electrode layer,
- wherein the third conductive semiconductor layer is located between the second conductive semiconductor layer and the electrode layer,
- wherein the recess extends to the second conductive semiconductor layer, and
- wherein the first semiconductor layer and the third conductive semiconductor layer are doped with an n-type conductive dopant.
13 more elements
Dependencies are inferred from the claim text.