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US 8,263,984 B2Granted
Process for making a GaN substrate
AssigneeSoitec
InventorBruce Faure
Life of this patent
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Abstract
In some embodiments, the invention relates to a process for making a GaN substrate comprising: transferring a first monocrystal GaN layer onto a supporting substrate; applying crystal growth for a second monocrystal GaN layer on the first layer; the first and second GaN layers thereby forming together the GaN substrate, the GaN substrate having a thickness of at least 10 micrometers, and removing at least one portion of the supporting substrate.
Claims20
A method of making a GaN substrate, comprising:
- transferring a first monocrystal GaN layer onto a supporting substrate;
- growing a second monocrystal GaN layer on the first monocrystal GaN layer, the first and second monocrystal GaN layers together forming the GaN substrate, the GaN substrate having a thickness of at least 10 micrometers;
- and
- removing at least one portion of the supporting substrate.
1 more element
Dependencies are inferred from the claim text.