Wiring substrate and semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShinji Maekawa, Yasuyuki Arai
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Abstract
The present invention provides a thin wiring pattern such as wiring formed by discharging a droplet. In the present invention, a porous (including microporous) substance is formed as a base film in forming pattern by using a droplet discharge method (also referred to as an ink-jetting method). One feature of a wiring substrate according to the present invention provides a porous film and a conductive layer thereon. One feature of a semiconductor device of the present invention provides a thin film transistor in which a gate electrode is formed by the conductive layer having the above-described structure.
Claims6
A semiconductor device comprising:
- a first conductive layer over an insulating substrate;
- an insulating layer over the first conductive layer;
- a porous film over the insulating layer, wherein the insulating layer and the porous film have an opening that reaches the first conductive layer;
- and
- a second conductive layer on and in contact with the porous film, wherein said second conductive layer is connected to the first conductive layer through the opening,
- wherein an outermost side end portion of the second conductive layer is aligned with a side end portion of the porous film, and
- wherein an entire top surface of the porous film is overlapped with the second conductive layer.
Dependencies are inferred from the claim text.