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US 8,263,982 B2Granted
Thin film transistor with a high impurity region overlapping the gate electrode
AssigneeSeiko Epson Corporation
InventorHidenori Kawata
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Abstract
A thin film transistor includes a gate electrode and a semiconductor layer. The semiconductor layer includes a channel region, a source region, a drain region, a low-concentration impurity region provided between the channel region and the source or drain region and a high-concentration impurity region. The high-concentration impurity region overlaps with the gate electrode.
Claims8
A thin film transistor comprising:
- a gate electrode;
- and
- a semiconductor layer including;
- a channel region;
- a source region;
- a drain region;
- a low-concentration impurity region provided between the channel region and the source or drain region, the low-concentration impurity region being doped with a first conductivity-type impurity;
- and
- a high-concentration impurity region having a higher impurity concentration than that in the channel region, the high-concentration impurity region overlapping with at least one edge portion of the gate electrode, the high-concentration impurity region being doped with a second conductivity-type impurity;
- wherein the semiconductor layer further includes a both conductivity-type impurity region provided between the high-concentration impurity region and the source or drain region in an area not overlapped by the gate electrode, the both conductivity-type impurity region being doped with both the first conductivity-type impurity and the second conductivity-type impurity.
7 more elements
Dependencies are inferred from the claim text.