Active matrix substrate, electro-optical device, and electronic apparatus
AssigneeSeiko Epson Corporation
InventorYasushi Yamazaki
Life of this patent
Estimating the term…
Abstract
An active matrix substrate including: a substrate; a display section having a pixel circuit formed on the substrate; and a protection circuit connected to an interconnection of the display section. The protection circuit has a diode-connected transistor, an insulating layer provided so as to cover the transistor, and a light-shielding layer provided in a region above the insulating layer so as to face at least a channel region in the transistor and electrically connected to at least any one of a gate electrode and a source electrode of the transistor.
Claims7
An active matrix substrate comprising:
- a substrate;
- a display section having a pixel circuit formed on the substrate;
- and
- a protection circuit connected to an interconnection of the display section,
- wherein the protection circuit has a diode-connected transistor, an insulating layer provided so as to cover the transistor, and a light-shielding layer provided in a region above the insulating layer so as to face at least a channel region in the transistor and electrically connected to at least any one of a gate electrode and a source electrode of the transistor, and
- wherein the light-shielding layer has an extension portion that extends outward from the transistor, and the extension portion forms a capacitive device along with a conductive member connected to at least any one of the gate electrode and the source electrode of the transistor and with the insulating layer.
An active matrix substrate comprising:
- a substrate;
- a display section having a pixel circuit formed on the substrate;
- and
- a protection circuit connected to an interconnection of the display section,
- wherein the protection circuit has a diode-connected transistor, an insulating layer provided so as to cover the transistor, and a light-shielding layer provided in a region above the insulating layer so as to face at least a channel region in the transistor and electrically connected to at least any one of a gate electrode and a source electrode of the transistor, and
- wherein the protection circuit is provided with a capacitive device having a first electrode connected to the gate electrode of the transistor, a second electrode connected to the source electrode of the transistor, and an insulating film formed by extending a gate insulating film of the transistor.
Dependencies are inferred from the claim text.