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US 8,263,978 B2Granted
Thin film transistor and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsByung-wook Yoo, Sang-yoon Lee, Myung-kwan Ryu, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Kyung-seok Son, Ji-sim Jung
Life of this patent
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Abstract
A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.
Claims6
A thin film transistor (TFT), comprising:
- a gate insulating layer on a gate;
- a crystallized channel on a portion of the gate insulating layer corresponding to the gate;
- a metal material on a surface of the channel, wherein the metal material crystallizes the channel;
- and
- a source and a drain contacting side surfaces of the channel,
- wherein the channel is formed of polysilicon, and
- the metal material includes at least one selected from the group consisting of nickel (Ni), silver (Ag), gold (Au), palladium (Pd), cobalt (Co), copper (Cu), iron (Fe), aluminum (Al), chromium (Cr), platinum (Pt) and combinations thereof.
4 more elements
Dependencies are inferred from the claim text.