TFT substrate and TFT substrate manufacturing method
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuyoshi Inoue, Koki Yano, Nobuo Tanaka
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Abstract
An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; a gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film.
Claims41
A TFT substrate comprising:
- a substrate;
- a first oxide layer formed above the substrate;
- a second oxide layer formed above the first oxide layer with a channel part separating parts of the second oxide layer;
- the channel part being defined by those separate parts of the second oxide layer with the first oxide layer at its base;
- a gate insulating film formed above the substrate, the first oxide layer and the second oxide layer;
- a gate electrode and a gate wire formed above the gate insulating film;
- wherein the first oxide layer is an n-type oxide semiconductor layer and the second oxide layer is an oxide conductor layer;
- and
- wherein at least one of a source wire, a drain wire, a source electrode, a drain electrode and a pixel electrode is formed from the second oxide layer.
Dependencies are inferred from the claim text.