Semiconductor structure with coincident lattice interlayer
AssigneeInternational Technology Center
InventorsBrian D. Schultz, Gary Elder McGuire
Life of this patent
Estimating the term…
Abstract
A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
Claims22
A semiconductor structure, comprising:
- a monocrystalline cubic substrate oriented with a {111} plane surface that is within 10 degrees of surface normal;
- an epitaxially grown electrically insulating interlayer overlaying the crystalline substrate that establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface;
- and
- an atomically stable two dimensional crystalline film on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer.
A semiconductor structure, comprising:
- a monocrystalline cubic substrate oriented with a {111} plane surface that is within 10 degrees of surface normal;
- an epitaxially grown electrically insulating interlayer overlaying the crystalline substrate that establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface;
- and
- an atomically stable two dimensional crystalline film on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer, where the atomically stable two dimensional crystalline film predominantly comprises carbon.
A semiconductor structure, comprising:
- a monocrystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal;
- an epitaxially grown electrically insulating interlayer overlaying the crystalline substrate that establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface, where the interlayer is fabricated of a material selected from the group consisting of Gd2O3, SrO and SrTiO3;
- and
- an atomically stable two dimensional crystalline film on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer.
A semiconductor structure, comprising:
- a substantially silicone monocrystalline cubic substrate oriented with a {111} plane surface that is within 2 degrees of surface normal;
- an epitaxially grown electrically insulating interlayer overlaying the crystalline substrate that establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface;
- an atomically stable two dimensional crystalline film predominantly composed of carbon on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer;
- and
- where the interlayer is fabricated of a material selected from the group consisting of CaF2, Gd2O3, SrO and SrTiO3.
Dependencies are inferred from the claim text.