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US 8,263,965 B2Granted
Single-crystal semiconductor layer with heteroatomic macro-network
AssigneesSTMicroelectronics (Crolles 2) SAS, STMicroelectronics S.r.l.
InventorsYves Campidelli, Oliver Kermarrec, Daniel Bensahel
Life of this patent
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Abstract
A single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular crystallographic network with a centered tetragonal prism.
Claims5
A semiconductor device, comprising:
- a first plurality of nanostructures formed from a first semiconductor material encapsulating a second semiconductor material;
- a second plurality of nanostructures formed from the first semiconductor material encapsulating the second semiconductor material;
- and
- a third plurality of nanostructures formed from the first semiconductor material encapsulating the second semiconductor material, wherein the first plurality of nanostructures are laterally equidistant from the second plurality of nanostructures, and the second plurality of nanostructures are laterally equidistant from the third plurality of nanostructures.
1 more element
Dependencies are inferred from the claim text.