Thin film memory device having a variable resistance
AssigneePanasonic Corporation
InventorsKoichi Osano, Shunsaku Muraoka, Hiroshi Sakakima
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Abstract
A thin film storage device includes a first electrode (3), a first variable resistance thin film (2), and a second electrode (1). The first electrode (3) is formed over a surface of a substrate (4). The first variable resistance thin film (2) is formed over a surface of the first electrode (3). The second electrode (1) is formed over a surface of the first variable resistance thin film (2). The first variable resistance thin film (2) comprises a material whose resistance in a bulk state changes in accordance with at least one of a lattice strain and a change of charge-order.
Claims5
A thin film storage device, comprising:
- a first electrode formed over a surface of a substrate;
- a variable resistance thin film formed by a material whose resistance changes in accordance with a voltage pulse and having a spinel structure formed over a surface of the first electrode;
- a second electrode formed over a surface of the variable resistance thin film;
- and
- an electric circuit configured to apply a voltage pulse to the first and second electrodes,
- wherein a resistance in a bulk state of the material which constitutes the variable resistance thin film changes in accordance with a lattice strain generated by a Jahn-Teller effect,
- a thickness of the variable resistance thin film is equal to or less than 200 nm, and
- said first electrode directly contacts a first surface of said variable resistance thin film, and said second electrode directly contacts a second surface of said variable resistance thin film.
Dependencies are inferred from the claim text.