Phase change memory cell with filled sidewall memory element and method for fabricating the same
AssigneeMacronix International Co., Ltd.
InventorsHsiang-Lan Lung, Chieh-Fang Chen
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Abstract
Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory element electrically coupling the bottom electrode to the top electrode. The memory element has an outer surface contacting a dielectric sidewall spacer that is on the sidewall of the via, and comprises a stem portion on the bottom electrode and a cup portion on the stem portion. A fill material is within an interior defined by an inner surface of the cup portion of the memory element.
Claims14
A memory device, comprising:
- a bottom electrode;
- a memory element electrically coupled to the bottom electrode, the memory element comprising a stem portion and a cup portion, the cup portion having a circular surface and an inner surface, the inner surface defining an interior region;
- a dielectric fill material within the interior region fully circumferentially surrounded by the cup portion of the memory element;
- and
- a top electrode electrically coupled to the circular surface.
A memory device, comprising:
- a bottom electrode;
- a memory element electrically coupled to the bottom electrode, the memory element comprising a stem portion and a cup portion;
- a dielectric element surrounded by the cup portion;
- and
- a top electrode electrically coupled to the cup portion.
Dependencies are inferred from the claim text.