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US 8,263,959 B2Granted
Phase change memory device and method of manufacture thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Hsiung Wang, Li-Shyue Lai, Denny Tang, Wen-Chin Lin
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Abstract
A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.
Claims22
A memory device, comprising:
- a substrate;
- an electrode located over the substrate, the electrode having an upper surface interrupted by an opening that has an electrode contact surface, the opening being in the electrode;
- a first insulator layer located directly on the upper surface of the electrode, the first insulator layer being a first material;
- a second insulator layer located directly on a portion of the electrode contact surface, the second insulator layer being a second material different from the first material;
- and
- a patterned phase change feature located over the first insulator layer, the second insulator layer, and the electrode contact surface.
3 more elements
An apparatus comprising a memory device that includes:
- a substrate;
- an electrode located over the substrate, the electrode having an upper surface interrupted by an opening that has a concave electrode contact surface, the opening being in the electrode;
- a first insulator layer located directly on the upper surface of the electrode, the first insulator layer having a first material;
- a second insulator layer having a portion that is located directly on a portion of the concave electrode contact surface, the second insulator layer having a second material that is different from the first material, the second insulator layer being in direct contact with the first insulator layer;
- and
- a patterned phase change feature located over the first insulator layer, the second insulator layer, and the concave electrode contact surface.
3 more elements
A device comprising:
- a substrate;
- an electrode disposed over the substrate;
- a first insulator layer disposed over the electrode;
- a tapered cavity extending through the first insulator and partially into the electrode, the tapered cavity having a first portion and a second portion;
- a second insulator layer disposed over the first portion of the tapered cavity;
- and
- a patterned phase change feature disposed over the second portion of the tapered cavity and the second insulator layer.
4 more elements
Dependencies are inferred from the claim text.