Photoelectric conversion device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTatsuya Arao, Atsushi Hirose, Kazuo Nishi, Yuusuke Sugawara
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTatsuya Arao, Atsushi Hirose, Kazuo Nishi, Yuusuke Sugawara
Estimating the term…
It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
A photoelectric conversion device comprising:
A photoelectric conversion device comprising:
A photoelectric conversion device comprising:
Dependencies are inferred from the claim text.