Stacked photovoltaic device
AssigneeSanyo Electric Co., Ltd.
InventorMasaki Shima
Life of this patent
Estimating the term…
Abstract
An aspect of the present invention provides a stacked photovoltaic device that comprises a first power generating unit including a first semiconductor layer made of a substantially intrinsic non-single crystal semiconductor layer which functions as a photoelectric conversion layer; and a second power generating unit formed above the first power generating unit, the second power generating unit including a second semiconductor layer made of a substantially intrinsic non-crystalline semiconductor layer which functions as a photoelectric conversion layer. In the stacked photovoltaic device, a first density of an element mainly constituting the first semiconductor layer of the first power generating unit is lower than a second density of an element mainly constituting the second semiconductor layer of the second power generating unit.
Claims9
A stacked photovoltaic device, comprising:
- a first power generating unit including a first semiconductor layer which functions as a photoelectric conversion layer;
- and
- a second power generating unit formed above the first power generating unit, the second power generating unit including a second semiconductor layer made of a substantially intrinsic non-crystalline semiconductor which functions as a photoelectric conversion layer,
- wherein a density of a main constituent element of the first semiconductor layer of the first power generating unit is lower than a density of a main constituent element of the second semiconductor layer of the second power generating unit.
Dependencies are inferred from the claim text.