Copper precursors for thin film deposition
AssigneeAir Products and Chemicals, Inc.
InventorsJohn Anthony Thomas Norman, Melanie K. Perez
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Abstract
Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.
Claims14
A copper precursor for depositing films via chemical vapor deposition or atomic layer deposition represented by formula (I):
- wherein R1 and R3 are each independently selected from an alkyl having a formula CnH2n+1 wherein n is a number ranging from 1 to 4;
- wherein R4 is selected from the group consisting of propyl, butyl and pentyl, with the proviso that R4 is always bonded to the oxygen through the second carbon of R4 from the nitrogen atom.
Cu(MeC(O)CHC(NCH2CHMeOSiMe2C2H3)Me).
Cu(MeC(O)CHC(NCH2CHEtOSiMe2C2H3)Me).
Cu(MeC(O)CHC(NCH2CHPrOSiMe2 C2H3)Me).
An electronic device comprising a copper film wherein the film is deposited via a process selected from atomic layer deposition or chemical vapor deposition from a reaction mixture comprising Cu(MeC(O)CHC(NCH2CHMeOSiMe2C2H3)Me) and a reducing agent comprising at least one selected from hydrogen, a carboxylic acid, an alcohol, a carboxylic ester, a silane, a borane, an alane, a germane, a hydrazine, ammonia, or mixtures thereof.
A process for forming a copper film on an at least one surface of a diffusion barrier layer, the process:
- providing the at least one surface of the diffusion barrier layer;
- and
- forming the copper film on at least a portion of the surface by either a chemical vapor deposition process or an atomic layer deposition process with a copper precursor having the following formula (I):
- wherein R1 and R3 are each independently selected from an alkyl having a formula CnH2n+1 wherein n is a number ranging from 1 to 4;
- wherein R4 is selected from the group consisting of propyl, butyl and pentyl, with the proviso that R4 is always bonded to the oxygen through the second carbon of R4 from the nitrogen atom.
Dependencies are inferred from the claim text.