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US 8,263,501 B2Granted
Silicon dioxide film fabricating process
AssigneeUnited Microelectronics Corp.
InventorsChien-Liang Lin, Yu-Ren Wang, Ying-Wei Yen
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Abstract
A silicon dioxide film fabricating process includes the following steps. Firstly, a substrate is provided. A rapid thermal oxidation-in situ steam generation process is performed to form a silicon dioxide film on the substrate. An annealing process is performed to anneal the substrate in a first gas mixture at a temperature in the range of 1000° C. to 1100° C.
Claims12
A silicon dioxide film fabricating process, comprising:
- providing a substrate;
- performing a pre-annealing process to anneal the substrate in a first gas mixture at a temperature in the range of 1000° C. to 1100° C., wherein the first gas mixture comprises a nitrous oxide gas and a hydrogen gas;
- performing a rapid thermal oxidation-in situ steam generation process to form a silicon dioxide film on the substrate, wherein the rapid thermal oxidation-in situ steam generation process is performed after the pre-annealing process;
- and
- performing a post-annealing process after the silicon dioxide film is formed to anneal the silicon dioxide film in the first gas mixture.
2 more elements
Dependencies are inferred from the claim text.