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US 8,263,500 B2Granted
Photoelectrochemical etching for laser facets
AssigneeThe Regents of the University of California
InventorsAdele C. Tamboli, Evelyn L. Hu, Steven P. DenBaars, Arpan Chakraborty
Life of this patent
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Abstract
A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.
Claims22
A method for fabricating a semiconductor laser device, comprising:
- forming one or more facets of the semiconductor laser device that are not compromised by ion damage, wherein the facets are formed by etching the facets using only a photoelectrochemical (PEC) etch, the etched facets are not crystallographic, the etched facets are not along a cleavage plane of the semiconductor laser device, and the etched facets are positioned appropriately and are sufficiently smooth to support oscillation of optical modes within a cavity of the semiconductor laser device bounded by the facets.
A method of fabricating a semiconductor laser device, comprising:
- forming one or more facets of the semiconductor laser device that are not comprised by ion damage, wherein the facets are formed by wet etching the semiconductor laser device, so that chemical etching only proceeds in areas illuminated by light, and wherein the wet etching comprises etching the facets of the semiconductor laser device using only a photoelectrochemical (PEC) etch, and the etched facets are positioned appropriately and are sufficiently smooth to support oscillation of optical modes within a cavity of the semiconductor laser device bounded by the facets.
Dependencies are inferred from the claim text.