Process for the deposition of an anti-reflection film on a substrate
AssigneeOc Oerlikon Balzers AG
InventorsOliver Rattunde, Stephan Voser
Life of this patent
Estimating the term…
Abstract
A method for the deposition of an anti-reflection film on a substrate is disclosed. A substrate including a plurality of solar cell structures is provided and placed in a vacuum chamber with a target including silicon. A flow of a nitrogen-containing reactive gas into the vacuum chamber is set to a first value while a voltage between the target and ground is switched off and then increased to a second value. A voltage is applied between the target and ground, whereby a film of silicon and nitrogen is deposited on the substrate in a flow of the nitrogen-containing reactive gas which is higher than the first value.
Claims13
Method for the deposition of an anti-reflection film on a substrate comprising:
- providing a substrate comprising a plurality of solar cell structures,
- introducing the substrate in a vacuum chamber with a target comprising silicon,
- setting a flow of a nitrogen-containing reactive gas into the vacuum chamber to a first value whilst the voltage between the target and ground is switched off,
- increasing the flow of the nitrogen-containing reactive gas to a second value,
- applying a voltage between the target and ground,
- depositing an anti-reflection film comprising silicon and nitrogen on the substrate during a flow of the nitrogen-containing reactive gas having a value which is higher than the first value.
Dependencies are inferred from the claim text.