High resistivity silicon wafer and method for manufacturing the same

A method for manufacturing a high resistivity silicon wafer where a p/n type conversion region is not generated and which includes a p-type region with variation in a resistivity distribution set to a range of 0 to 30% across all portions in a wafer thickness direction with respect to a reference value set to a range of 0.1 to 10 k Ωcm, the method comprising:

• pulling a single crystal such that the single crystal has a p-type dopant concentration at which a wafer surface resistivity becomes in a range of 0.1 to 10 k Ωcm, an oxygen concentration Oi of 5.0×1017 to 20×1017 atoms/cm3 (ASTM F-121, 1979), and a nitrogen concentration of 1.0×1013 to 10×1013 atoms/cm3 (ASTM F-121, 1979) by using a Czochralski method;
• processing the single crystal into wafers by slicing the single crystal;
• subjecting the wafer to an oxygen out-diffusion heat treatment process in a non-oxidizing atmosphere;
• and
• subjecting the wafer to a heat treatment process for forming oxygen precipitate nuclei and/or a heat treatment process for forming oxygen precipitates.

A method for manufacturing a high resistivity silicon wafer, which has a sufficient resistivity for reducing current loss occurring in a device region in which a voltage controller is to be formed in a radio transmission/reception circuit using a high frequency of 10 GHz to 100 GHz and having a power of about 10 mW to 100 mW, and where a depth range of a p/n type conversion occurrence region from a wafer surface can be adjusted, the method comprising:

• pulling a single crystal such that the single crystal has a p-type dopant concentration at which a wafer surface resistivity becomes in a range of 0.1 to 10 k Ωcm, an oxygen concentration Oi of 5.0×1017 to 20×1017 atoms/cm3 (ASTM F-121, 1979), and a nitrogen concentration of 1.0×1013 to 10×1013 atoms/cm3 (ASTM F-121, 1979) by using a Czochralski method;
• processing the single crystal into wafers by slicing the single crystal;
• and
• subjecting the wafer to an oxygen out-diffusion heat treatment process in a non-oxidizing atmosphere,
• wherein a peak position of a resistivity serving as a boundary between a p-type region of a wafer surface side and a p/n conversion region of an inner side of a thickness direction is adjusted by the nitrogen concentration such that the peak position is set to a boundary depth in a range of 10 to 70 μm from a wafer surface.

A method for manufacturing a high resistivity silicon wafer, which has a sufficient resistivity for reducing current loss occurring in a device region in which a voltage controller is to be formed in a radio transmission/reception circuit using a high frequency of 10 GHz to 100 GHz and having a power of about 10 mW to 100 mW, where a p/n type conversion region is not generated, and which includes a p-type region with variation in a resistivity distribution set to a range of 0 to 30% across all portions in a wafer thickness direction with respect to a reference value set to a range of 0.1 to 10 k Ωcm, the method comprising:

• pulling a single crystal such that the single crystal has a p-type dopant concentration at which a wafer surface resistivity becomes in a range of 0.1 to 10 k Ωcm, an oxygen concentration Oi of 5.0×1017 to 20×1017 atoms/cm3 (ASTM F-121, 1979), and a nitrogen concentration of 1.0×1013 to 10×1013 atoms/cm3 (ASTM F-121, 1979) by using a Czochralski method;
• processing the single crystal into wafers by slicing the single crystal;
• subjecting the wafer to an oxygen out-diffusion heat treatment process in a non-oxidizing atmosphere;
• and
• subjecting the wafer to a heat treatment process for forming oxygen precipitate nuclei and/or a heat treatment process for forming oxygen precipitates.