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US 8,263,483 B2Granted
Method including producing a monocrystalline layer
AssigneeInfineon Technologies Austria AG
InventorsFranz Hirler, Hans-Joachim Schulze
Life of this patent
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Abstract
A method including producing a monocrystalline layer is disclosed. A first lattice constant on a monocrystalline substrate has a second lattice constant at least in a near-surface region. The second lattice constant is different from the first lattice constant. Lattice matching atoms are implanted into the near-surface region. The near-surface region is momentarily melted. A layer is epitaxially deposited on the near-surface region that has solidified in monocrystalline fashion.
Claims25
A method comprising:
- providing a monocrystalline substrate;
- and
- producing a monocrystalline layer having a first lattice constant a on the monocrystalline substrate having a second lattice constant b at least in a near-surface region, the second lattice constant being different from the first lattice constant a, comprising:
- implanting lattice matching atoms at least in the near-surface region;
- momentary melting of the near-surface region;
- and
- epitaxial deposition of the layer on the near-surface region that has solidified in monocrystalline fashion,
- wherein the substrate has an impurity, and
- wherein the impurity is contained with a concentration of at least 5×1019 cm−3 in the substrate.
6 more elements
A method comprising:
- providing a monocrystalline substrate;
- and
- producing a monocrystalline layer having a first lattice constant a on the monocrystalline substrate having a second lattice constant b at least in a near-surface region, the second lattice constant being different from the first lattice constant a, comprising:
- implanting lattice matching atoms at least in the near-surface region;
- momentary melting of the near-surface region;
- and
- epitaxial deposition of the layer on the near-surface region that has solidified in monocrystalline fashion.
- wherein the substrate has an impurity, and
- wherein the impurity is phosphorus.
6 more elements
A method comprising:
- providing a monocrystalline substrate;
- and
- producing a monocrystalline layer having a first lattice constant a on the monocrystalline substrate having a second lattice constant b at least in a near-surface region, the second lattice constant being different from the first lattice constant a, comprising:
- implanting lattice matching atoms at least in the near-surface region;
- momentary melting of the near-surface region;
- and
- epitaxial deposition of the layer on the near-surface region that has solidified in monocrystalline fashion,
- wherein the lattice matching atoms, at least in the near-surface region, match the second lattice constant b to the first lattice constant a by the lattice matching atoms being incorporated into the crystal lattice of the near-surface region.
5 more elements
A method of making a semiconductor comprising:
- providing a monocrystalline substrate made of a semiconductor material;
- and
- producing a monocrystalline layer having a first lattice constant a on the monocrystalline substrate having a second lattice constant b at least in a near-surface region, the second lattice constant being different from the first lattice constant a comprising:
- implanting lattice matching atoms at least in the near-surface region;
- momentary melting of the near-surface region;
- and
- epitaxial deposition of the layer on the near-surface region that has solidified in monocrystalline fashion.
4 more elements
Dependencies are inferred from the claim text.