Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires

A method for the site-selective growth of horizontal nanowires, the method comprising the steps of:

• forming a first silicon oxide film on a silicon substrate (first step);
• forming at least one pi-shaped aluminum layer having a thickness, a length and a width at sites where it is desired to grow nanowires on the first silicon oxide film by patterning (second step);
• forming a second silicon oxide thin-film to cover all surfaces except surfaces of one side of the pi-shaped aluminum layer (third step);
• anodizing the uncovered surfaces of the pi-shaped aluminum layer to a depth to form hollow channels, each of which is surrounded by an aluminum oxide film, in a direction parallel to the silicon substrate (fourth step);
• depositing catalytic metal layers on bottom surfaces of the hollow channels opposed to openings of the hollow channels (fifth step);
• and
• growing nanowires from the catalytic metal layers within the hollow channels in the direction parallel to the silicon substrate (sixth step).