Method for cutting semiconductor substrate

A method of cutting a semiconductor substrate, the method comprising the steps of:

• irradiating a semiconductor substrate having a front face and a rear face and a sheet bonded thereto by way of a die-bonding resin layer with laser light, having a wavelength that enables the laser light to transmit through the semiconductor substrate, while locating a light-converging point within the semiconductor substrate under a condition with a peak power density of at least 1×108 (W/cm2) at the light-converging point and a pulse width of 1 μs or less, thereby forming a modified region including a molten processed region beneath the front face of the semiconductor substrate, the modified region including the molten processed region forming a part which is to be cut;
• and
• expanding the sheet after forming the part which is to be cut, thereby cutting and separating the semiconductor substrate with the die-bonding resin layer bonded thereto into adjacent separated portions of the semiconductor substrate each having at least a portion of the die-bonding resin layer bonded thereto, forming a gap between the adjacent separated portions of the semiconductor substrate, and cutting and separating at least the semiconductor substrate along the part which is to be cut, wherein the die-bonding resin layer simultaneously begins to be separated into pieces at the same time the semiconductor substrate is separated into pieces in response to expanding of the sheet.

A method of cutting a semiconductor substrate, the method comprising the steps of:

• irradiating a semiconductor substrate having a front face and a rear face and a sheet bonded thereto by way of a die-bonding resin layer with laser light, having a wavelength that enables the laser light to transmit through the semiconductor substrate, while locating a light-converging point within the semiconductor substrate, thereby forming a modified region caused by photon absorption beneath the front face of the semiconductor substrate, the modified region forming a part which is to be cut;
• generating a stress in the semiconductor substrate along the part which is to be cut after forming the part which is to be cut, thereby cutting the semiconductor substrate along the part which is to be cut;
• and
• expanding the sheet after the step of cutting the semiconductor substrate, thereby separating at least the semiconductor substrate along the part which is to be cut, wherein the die-bonding resin layer simultaneously begins to be separated into pieces at the same time the semiconductor substrate is separated into pieces in response to expanding of the sheet.

A method of cutting a semiconductor substrate, the method comprising the steps of:

• irradiating a semiconductor substrate having a front face and a rear face and a sheet bonded thereto by way of a die-bonding resin layer with laser light, having a wavelength that enables the laser light to transmit through the semiconductor substrate, while locating a light-converging point within the semiconductor substrate under a condition with a peak power density of at least 1×108 (W/cm2) at the light-converging point and a pulse width of 1 μs or less, thereby forming a modified region caused by multiphoton absorption beneath the front face of the semiconductor substrate, the modified region forming a part which is to be cut;
• generating a stress in the semiconductor substrate along the part which is to be cut after forming the part which is to be cut, thereby cutting the semiconductor substrate along the part which is to be cut;
• and
• expanding the sheet after cutting the semiconductor substrate, thereby separating at least the semiconductor substrate along the part which is to be cut, wherein the die-bonding resin layer simultaneously begins to be separated into pieces at the same time the semiconductor substrate is separated into pieces in response to expanding of the sheet.

A method of cutting a semiconductor substrate, the method comprising the steps of:

• irradiating a semiconductor substrate having a front face and a rear face and a sheet bonded thereto by way of a die-bonding resin layer with laser light, having a wavelength that enables the laser light to transmit through the semiconductor substrate, while locating a light-converging point within the semiconductor substrate, thereby forming a modified region beneath the front face of the semiconductor substrate, the modified region forming a part which is to be cut;
• generating a stress in the semiconductor substrate along the part which is to be cut after forming the part which is to be cut, thereby cutting the semiconductor substrate along the part which is to he cut;
• and
• expanding the sheet after cutting the semiconductor substrate, thereby separating at least the semiconductor substrate along the part which is to be cut, wherein the die-bonding resin layer simultaneously begins to be separated into pieces at the same time the semiconductor substrate is separated into pieces in response to expanding of the sheet.

A method of manufacturing a semiconductor device formed using a method of cutting a semiconductor substrate, the manufacturing method comprising:

• irradiating a semiconductor substrate, having a front face and a rear face and a sheet bonded thereto by way of a die-bonding resin layer and having a surface formed with at least one semiconductor device, with laser light, having a wavelength that enables the laser light to transmit through the semiconductor substrate, while locating a light-converging point within the semiconductor substrate, thereby forming a modified region caused by photon absorption beneath the front face of the semiconductor substrate, the modified region forming a part which is to be cut;
• and
• expanding the sheet after forming the part which is to be cut, thereby cutting and separating the semiconductor substrate with the die-bonding resin layer bonded thereto into adjacent separated portions of the semiconductor substrate each having at least a portion of the die-bonding resin layer bonded thereto, forming a gap between the adjacent separated portions of the semiconductor substrate, and cutting and separating at least the semiconductor substrate along the part which is to be cut, with such separating thereby providing at least one manufactured semiconductor device, wherein the die-bonding resin layer simultaneously begins to be separated into pieces at the same time the semiconductor substrate is separated into pieces in response to expanding of the sheet.

A method of manufacturing a semiconductor device formed using a method of cutting a semiconductor substrate, the manufacturing method comprising:

• irradiating a semiconductor substrate, having a front face and a rear face and a sheet bonded thereto by way of a die-bonding resin layer and having a surface formed with at least one semiconductor device, with laser light, having a wavelength that enables the laser light to transmit through the semiconductor substrate, while locating a light-converging point within the semiconductor substrate under a condition with a peak power density of at least 1×108 (W/cm2) at the light-converging point and a pulse width of 1 μs or less, thereby forming a modified region including a molten processed region beneath the front face of the semiconductor substrate, the modified region including the molten processed region forming a part which is to be cut;
• and
• expanding the sheet after forming the part which is to be cut, thereby cutting and separating the semiconductor substrate with the die-bonding resin layer bonded thereto into adjacent separated portions of the semiconductor substrate each having at least a portion of the die-bonding resin layer bonded thereto, forming a gap between the adjacent separated portions of the semiconductor substrate, and cutting and separating at least the semiconductor substrate along the part which is to be cut, with such separating thereby providing at least one manufactured semiconductor device, wherein the die-bonding resin layer simultaneously begins to be separated into pieces at the same time the semiconductor substrate is separated into pieces in response to expanding of the sheet.

A method of manufacturing a semiconductor device formed using a method of cutting a semiconductor substrate, the manufacturing method comprising:

• irradiating a semiconductor substrate, having a front face and a rear face and a sheet bonded thereto by way of a die-bonding resin layer and having a surface formed with at least one semiconductor device, with laser light, having a wavelength that enables the laser light to transmit through the semiconductor substrate, while locating a light-converging point within the semiconductor substrate, thereby forming a modified region beneath the front face of the semiconductor substrate, the modified region forming a part which is to be cut;
• and
• expanding the sheet after forming the part which is to be cut, thereby cutting and separating the semiconductor substrate with the die-bonding resin layer bonded thereto into adjacent separated portions of the semiconductor substrate each having at least a portion of the die-bonding resin layer bonded thereto, forming a gap between the adjacent separated portions of the semiconductor substrate, and cutting and separating at least the semiconductor substrate along the part which is to be cut, with such separating thereby providing at least one manufactured semiconductor device, wherein the die-bonding resin layer simultaneously begins to be separated into pieces at the same time the semiconductor substrate is separated into pieces in response to expanding of the sheet.

A method of manufacturing a semiconductor device formed using a method of cutting a semiconductor device, the manufacturing method comprising:

• irradiating a semiconductor substrate, having a front face and a rear face and a sheet bonded thereto by way of a die-bonding resin layer and having a surface formed with at least one semiconductor device, with laser light, having a wavelength that enables the laser light to transmit through the semiconductor substrate, while locating a light-converging point within the semiconductor substrate, thereby forming a modified region caused by photon absorption beneath the front face of the semiconductor substrate, the modified region forming a part which is to be cut;
• generating a stress in the semiconductor substrate along the part which is to be cut after forming the part which is to be cut, thereby cutting the semiconductor substrate along the part which is to be cut;
• and
• expanding the sheet after cutting the semiconductor substrate, thereby separating at least the semiconductor substrate along the part which is to be cut, with such separating thereby providing at least one manufactured semiconductor device, wherein the die-bonding resin layer simultaneously begins to be separated into pieces at the same time the semiconductor substrate by is separated into pieces in response to expanding of the sheet.

A method of manufacturing a semiconductor device formed using a method of cutting a semiconductor substrate, the manufacturing method comprising:

• irradiating a semiconductor substrate, having a front face and a rear face and a sheet bonded thereto by way of a die-bonding resin layer and having a surface formed with at least one semiconductor device, with laser light, having a wavelength that enables the laser light to transmit through the semiconductor substrate, while locating a light-converging point within the semiconductor substrate under a condition with a peak power density of at least 1×108 (W/cm2) at the light-converging point and a pulse width of 1 μs or less, thereby forming a modified region caused by multiphoton absorption beneath the front face of the semiconductor substrate, the modified region forming a part which is to be cut;
• generating a stress in the semiconductor substrate along the part which is to be cut after forming the part which is to be cut, thereby cutting the semiconductor substrate along the part which is to be cut;
• and
• expanding the sheet after cutting the semiconductor substrate, thereby separating at least the semiconductor substrate along the part which is to be cut, with such separating thereby providing at least one manufactured semiconductor device, wherein the die-bonding resin layer simultaneously begins to be separated into pieces at the same time the semiconductor substrate by is separated into pieces in response to expanding of the sheet.

A method of manufacturing a semiconductor device formed using a method of cutting a semiconductor substrate, the manufacturing method comprising:

• irradiating a semiconductor substrate, having a front face and a rear face and a sheet bonded thereto by way of a die-bonding resin layer and having a surface formed with at least one semiconductor device, with laser light, having a wavelength that enables the laser light to transmit through the semiconductor substrate, while locating a light-converging point within the semiconductor substrate, thereby forming a modified region beneath the front face of the semiconductor substrate, the modified region forming a part which is to be cut;
• generating a stress in the semiconductor substrate along the part which is to be cut after forming the part which is to be cut, thereby cutting the semiconductor substrate along the part which is to be cut;
• and
• expanding the sheet after cutting the semiconductor substrate, thereby separating at least the semiconductor substrate along the part which is to be cut, with such separating thereby providing at least one manufactured semiconductor device, wherein the die-bonding resin layer simultaneously begins to be separated into pieces at the same time the semiconductor substrate by is separated into pieces in response to expanding of the sheet.