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US 8,263,464 B2Granted
Systems and methods for memory structure comprising a PPROM and an embedded flash memory
AssigneeMacronix International Co., Ltd.
InventorChao I Wu
Life of this patent
Estimating the term…
Abstract
A memory structure that combines embedded flash memory and PPROM. The PPROM can be used as a memory structure. The flash memory can be used, e.g., as air replacement cells or back up memory, or additional memory cells. The PPROM cells are stacked on top of the flash memory cells and the PPROM density can be increased by implementing three-dimensional PPROM structures.
Claims13
A method for fabricating a memory structure comprising a PPROM cell layer and a flash memory cell layer, comprising:
- fabricating a flash memory cell comprising forming an ONO layer on top of a silicon substrate, patterning the ONO layer, and forming a source and drain region in the silicon substrate;
- and
- fabricating a PPROM cell layer on top of the fabricated flash memory cell.
A method for fabricating a memory structure, the method comprising:
- fabricating a SONOS cell layer;
- and
- fabricating a PPROM cell layer comprising a plurality of diode cells on top of the fabricated SONOS cell layer.
Dependencies are inferred from the claim text.