Lateral double diffused metal oxide semiconductor

Abstract

Disclosed are lateral double diffused metal oxide semiconductor (LDMOS) transistors having a uniform threshold voltage and methods for manufacturing the same. The methods include forming a polysilicon layer over the semiconductor substrate including a shallow trench isolation region, etching a portion of the polysilicon layer over an active region, implanting first conductive-type impurity ions using the polysilicon layer as a mask to form a first conductive-type body region, implanting second conductive-type impurity ions using the polysilicon layer as a mask to form a second conductive-type channel region in the first conductive-type body region, removing the polysilicon layer, forming gate electrodes in the polysilicon-free region, and forming a source region and a drain region in the first conductive-type body region using the gate electrode and the shallow trench isolation as ion-implantation masks.

Dependencies are inferred from the claim text.