Method for manufacturing semiconductor device with buried gates
AssigneeHynix Semiconductor Inc.
InventorKyung Do Kim
Life of this patent
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Abstract
A method for manufacturing a semiconductor device comprises forming a buried gate after forming an active region to have a line type. The buried gate comprises an operational gate and a dummy gate. A height of a gate electrode layer (conductive material) of the dummy gate is formed to be lower than that of a gate electrode layer of the operational gate, thereby increasing a threshold voltage and preventing an overlap of the ion-implanted active region with the dummy gate. As a result, a Gate Induced Drain Leakage (GIDL) is prevented to improve a refresh characteristic of the semiconductor device.
Claims16
A method for manufacturing a semiconductor device, the method comprising:
- forming a device isolation region that defines an active region in a semiconductor substrate;
- etching the semiconductor substrate to form a gate region having a first recess and a second recess;
- depositing a conductive material over the gate region and within the first and second recesses;
- to form a including an active gate in the first recess and a dummy gate in the second recess;
- etching the conductive material provided in the second recess while preventing the conductive material provided in the first recess from being etched;
- etching the conductive material provided in the first and second recesses;
- and
- depositing an insulating film over the semiconductor substrate and the conductive material within the first and second recesses,
- wherein the conductive material in the first recess defines an active gate and the conductive material in the second recess defines a dummy gate.
A method for manufacturing a semiconductor device, the method comprising:
- forming a device isolation region that defines an active region in a semiconductor substrate;
- etching the semiconductor substrate to form a first recess and a second recess;
- depositing a conductive material within the first recess and the second recess;
- performing a first etch step to etch the conductive material in the first recess and the second recess;
- performing a second etch step to etch the conductive material of the second recess without etching the conductive material in the first recess;
- and
- depositing an insulating film over the semiconductor substrate and within the first and second recesses,
- wherein the conductive material in the first recess defines an active gate and the conductive material in the second recess defines a dummy gate that is maintained at an off state, and
- wherein the dummy gate is provided with a height that is less than that of the active gate.
Dependencies are inferred from the claim text.