Methods of manufacturing capacitor and semiconductor device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorKwan-Young Yun
Life of this patent
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Abstract
A capacitor includes a first capacitor structure on a substrate, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode, a second capacitor structure on the first capacitor structure, the second capacitor structure including a third electrode, a second dielectric layer pattern, and a fourth electrode, at least one first contact pad on a side of the first electrode, and a wiring structure connecting the at least one first contact pad and the fourth electrode.
Claims19
A method of manufacturing a capacitor, comprising:
- forming a first insulation layer on a semiconductor substrate, the first insulation layer including a first opening;
- forming a first capacitor structure in the first opening, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode;
- forming a second capacitor structure on the first capacitor structure, the second capacitor structure including a third electrode, a second dielectric layer pattern, and a fourth electrode;
- forming at least one first contact pad on a side of the first electrode;
- and
- forming a wiring structure connecting the at least one first contact pad and the fourth electrode.
A method of manufacturing a semiconductor device, comprising:
- forming a transistor in a cell region of a substrate, the transistor including a plurality of impurity regions;
- forming a first insulation layer including:
- a plurality of first contact holes and a first opening, wherein the plurality of first contact holes at least partially exposes the plurality of impurity regions and the first opening at least partially exposes a surface of a logic region of the substrate, and
- forming a plurality of second contact plugs within the plurality of first contact holes;
- forming at least one third contact plug on at least one of the second contact plugs;
- forming a first capacitor structure within the first opening, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode;
- forming a second capacitor structure on the first capacitor structure, the second capacitor structure including a third electrode, a second dielectric layer pattern, and a fourth electrode;
- forming at least one first contact pad on a side of the first electrode;
- and
- forming a wiring structure connecting the at least one first contact pad and the fourth electrode.
Dependencies are inferred from the claim text.