Method of forming variable resistance memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-Lim Park, Jinil Lee, Dongho Ahn, Sihyung Lee, Gyuhwan Oh
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Abstract
Provided are a method of forming an electrode of a variable resistance memory device and a variable resistance semiconductor memory device using the method. The method includes: forming a heat electrode; forming a variable resistance material layer on the heat electrode; and forming a top electrode on the variable resistance material layer, wherein the heat electrode includes a nitride of a metal whose atomic radius is greater than that of titanium (Ti) and is formed through a thermal chemical vapor deposition (CVD) method without using plasma.
Claims21
A method of forming a variable resistance memory device, comprising:
- forming a heat electrode;
- forming a variable resistance material layer on the heat electrode;
- performing one of a thermal treatment operation and a plasma treatment operation, with a halogen element, on the variable resistance material later;
- and
- forming a top electrode on the variable resistance material layer,
- wherein the heat electrode includes a nitride of a metal whose atomic radius is greater than that of titanium (Ti) and is formed through a thermal chemical vapor deposition (CVD) method without using plasma and the heat electrode is formed to have a resistivity of more than about 5000 μΩ·cm.
A method of forming a variable resistance memory device comprising:
- forming a heat electrode;
- forming a variable resistance material layer on the heat electrode;
- and
- forming a top electrode on the variable resistance material layer, and
- performing one of a thermal treatment operation and a plasma treatment operation, with a halogen element, on the variable resistance material later,
- wherein the heat electrode includes a nitride of a metal whose atomic radius is greater than that of titanium (Ti) and has a resistivity of more than about 5000 μΩ·cm.
Dependencies are inferred from the claim text.