Power semiconductor component with charge compensation structure and method for the fabrication thereof

A method for fabricating semiconductor components, the method comprising:

• providing a highly doped semiconductor wafer of a first or of a complementary conduction type having a multiplicity of semiconductor component positions, arranged in rows and columns, as a substrate of a semiconductor body;
• growing an epitaxial layer of the first conduction type onto the semiconductor wafer as starting material for a first drift zone type;
• introducing a trench structure in the semiconductor component positions;
• doping the trench structure walls by means of a dopant layer of a complementary conduction type for charge compensation zones;
• anisotropically etching free a bottom region of the trench structure and top sides of the first drift zone types;
• and
• growing a medium-doped epitaxial layer of the first conduction type in the trench structure as starting material for a second drift zone type.